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Latest Nexperia news & announcements

Nexperia releases the smallest DFN MOSFETs in the world

Nexperia, the pioneer in essential semiconductors announced the release of a new range of 20 V & 30 V MOSFETs in the world’s smallest DFN package, the DFN0603. Nexperia already offers ESD protection devices in this package, but has also succeeded in bringing it to their MOSFET portfolio, a feat as yet unmatched in the industry. Challenges Next-generation wearable and hearable devices are incorporating new levels of artificial intelligence (AI) and machine learning (ML), creating several challenges for product designers. Firstly, available board space is at a premium as functionality is added, plus heat dissipation becomes a problem as power consumption increases. Nexperia has drawn on its decades of experience as an industry pioneer in the production of discrete components and designed this innovative range of tiny MOSFETs to successfully overcome both concerns. Improved efficiency The ultra-low-profile DFN0603 package, measuring only 0.63 x 0.33 x 0.25 mm, uses 13% less space than MOSFETs in the next smallest package (DFN0604). Impressively, this size reduction has been achieved without compromising device performance in fact the RDS(on) of these devices has been reduced by 74%, helping to improve efficiency and thereby enabling wearable equipment designers to achieve even greater power density. This new range of tiny MOSFETs includes: PMX100UN 20 V, N-channel Trench MOSFET PMX100UNE 20 V, N-channel Trench MOSFET with 2kV ESD protection (HBM) PMX300UNE 30 V, N-channel Trench MOSFET PMX400UP 20 V, P-channel Trench MOSFET Nexperia has plans to add two more MOSFETs to this range later in 2022.

Nexperia announces two ESD protection devices optimised for use with retimers and redrivers on high-speed data lines

Nexperia, the expert in essential semiconductors, announces two Electrostatic Discharge (ESD) protection devices optimised for use with retimers and redrivers on high-speed data lines. PESD2V8Y1BSF is designed to protect USB4 (Thunderbolt) interfaces while PESD4V0Y1BCSF is intended for use with both USB4 as well as HDMI 2.1. These products use Nexperia’s proven TrEOS technology, which combines low clamping with low capacitance and high robustness. Retimers and redrivers are commonly used in the design of high-speed USB4 interfaces. However, these result in shorter board traces which have a lower parasitic inductance, an unintended consequence of which is a reduction in the overall system-level ESD robustness. Peak clamping voltages The PESD2V8Y1BSF and PESD4V0Y1BCSF provide low very fast Transmission Line Pulse (vfTLP) peak clamping voltages, which are even lower than USB4 protection solutions without visible trigger voltage in the standard I(V) TLP curve. This helps to compensate for the reduced inductance between protection and retimer, thereby increasing overall system-level ESD robustness. To comply with budget loss recommendations for ESD, these devices are designed to have exceptionally low insertion loss (-0.29 dB @ 10 GHz) and return loss (-20.6 dB @ 10 GHz). Contrary to other solutions, the capacitance does not increase with operating voltage, offering the full RF performance up to the reverse standoff voltage. Reverse standoff voltage The PESD2V8Y1BSF and PESD4V0Y1BCSF offer greater design flexibility than other ESD protection devices The PESD2V8Y1BSF and PESD4V0Y1BCSF offer greater design flexibility than other ESD protection devices because they can be placed immediately next to the connector of the device which they are protecting. This means that the AC coupling capacitance is protected as well. On top, it places most of the line inductance between ESD protection and protected device to optimise system ESD performance. “Nexperia enables design engineers to meet tight budgets on both insertion and return loss for high speed USB4 data lines by providing devices that minimise the impact of ESD protection on overall system budget,” says Stefan Seider, Senior Product Manager at Nexperia. Older interface standards “These devices offer the optimum balance between optimising system-level ESD robustness and RF performance.” To maintain backward compatibility with older interface standards like USB3.2, which can be connected over USB Type-C, the PESD2V8Y1BSF has a reverse standoff voltage, VRWM = 2.8 V, while the PESD4V0Y1BCSF has a VRWM = 4 V making it suitable for HDMI 2.1 as well. The RF performance of the TrEOS technology used for both devices does not degrade over the operation voltage range. Apart from USB4 and HDMI 2.1, both parts can also be used to protect PCIe or DisplayPort interfaces.

Ultra-low capacitance ESD protection diodes from Nexperia protect automotive data interfaces

Nexperia, the pioneer in essential semiconductors announced an extension to its portfolio of extremely low clamping and ultra-low capacitance ESD protection diodes. This portfolio is designed to protect high-speed data lines such as USB 3.2, HDMI 2.0, LVDS, automotive A/V Monitors, displays, and cameras. Additionally, this portfolio also aims to address the upcoming high-speed video links as well as the OPEN Alliance MGbit ethernet applications. 2-pin and 3-pin single-line devices These latest product additions include PESD5V0C1BLS-Q and PESD5V0C1ULS-Q both as 2-pin single-line devices with a very compact DFN1006BD-2 package for optimised routing flexibility. In addition, PESD5V0C2UM and PESD5V0C2UM-Q are available as 3-pin devices for both differential lines in DFN1006-3. All variants come in leadless packages to improve electrical performance and signal integrity. ESD voltage clamping diodes Nexperia’s ESD protection solutions have allowed these diodes to provide best-in-class signal integrity performance Electrostatic discharge (ESD) voltage clamping diodes perform a vital function by protecting data interfaces in automotive subsystems from damage. However, it is important that they do not degrade data signal integrity or negatively impact the electromagnetic compatibility (EMC) performance of the systems which they protect. Nexperia’s long-standing expertise in the design of ESD protection solutions has allowed these diodes to provide best-in-class signal integrity performance because of their ultra-low device capacitance (as low as 0.3 pF). Automotive qualified devices For maximum design flexibility, these diodes are offered in both dual-line DFN1006-3 and single-line DFN1006BD-2. With the latter packages have side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 automotive qualified devices exhibit deep snapback behaviour combined with a low resistance of 0.27Ω, for improved system level robustness and clamping performance in high-speed data interfaces.

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